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cc1120 swrs112c C revised april 2012 page 1 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. high performance rf transceiver for narrowband syst ems applications narrowband ultra low power wireless systems with channel spacing down to 12.5 khz 170 / 315/ 433 / 868 / 915 / 950 mhz ism/srd band wireless metering and wireless smart grid (amr and ami) ieee 802.15.4g systems home and building automation wireless alarm and security systems industrial monitoring and control wireless healthcare applications wireless sensor networks and active rfid private mobile radio regulations suitable for systems targeting compliance with: europe etsi en 300 220 etsi en 54-25 us fcc cfr47 part 15 fcc cfr47 part 90, 24 and 101 japan arib rcr std-t30 arib std-t67 arib std-t96 key features high performance single chip transceiver o adjacent channel selectivity: 64 db at 12.5 khz offset o blocking performance: 91 db at 10 mhz offset o excellent receiver sensitivity: -123 dbm at 1.2 kbps -110 dbm at 50 kbps -127 dbm using built-in coding gain o very low phase noise: -111 dbc/hz at 10 khz offset suitable for systems targeting etsi category 1 compliance in 169 mhz and 433 mhz bands high spectral efficiency (9.6 kbps in 12.5 khz cha nnel in compliance with fcc narrowbanding mandate) power supply o wide supply voltage range (2.0 v C 3.6 v) o low current consumption: - rx: 2 ma in rx sniff mode - rx: 17 ma peak current in low power mode - rx: 22 ma peak current in high performance mode - tx: 45 ma at +14 dbm o power down: 0.3 a programmable output power up to +16 dbm with 0.4 db step size automatic output power ramping configurable data rates: 0 to 200 kbps supported modulation formats: 2-fsk, 2- gfsk, 4-fsk, 4-gfsk, msk, ook wavematch: advanced digital signal processing for improved sync detect performance rohs compliant 5x5mm qfn 32 package peripherals and support functions enhanced wake-on-radio functionality for automatic low-power receive polling separate 128-byte rx and tx fifos includes functions for antenna diversity support support for re-transmissions support for auto-acknowledge of received packets tcxo support and control, also in power modes automatic clear channel assessment (cca) for liste n- before-talk (lbt) systems built in coding gain support for increased range a nd robustness digital rssi measurement support for seamless integration with the cc1190 for increased range giving up to 3 db improvement in sensitivity and up to +27 dbm output power description the cc1120 is a fully integrated single-chip radio transceiver designed for high performance at very l ow power and low voltage operation in cost effective w ireless systems. all filters are integrated, removing the n eed for costly external saw and if filters. the device is m ainly intended for the ism (industrial, scientific and me dical) and srd (short range device) frequency bands at 164 - 192 mhz, 274-320 mhz, 410-480 mhz and 820-960 mhz. the cc1120 provides extensive hardware support for packet handling, data buffering, burst transmissions, clea r channel assessment, link quality indication and wak e-on- radio. the cc1120 main operating parameters can be controlled via an spi interface. in a typical syste m, the cc1120 will be used together with a microcontroller and only few external passive components.
cc1120 swrs112c C revised april 2012 page 2 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. table of contents 1 electrical specifications .......................... ................................................... .......................3 1.1 a bsolute m ax r atings ................................................... ................................................... ..........3 1.2 g eneral c haracteristics ................................................... ................................................... ......3 1.3 rf c haracteristics ................................................... ................................................... ................3 1.4 r egulatory s tandards ................................................... ................................................... .........4 1.5 c urrent c onsumption , s tatic m odes ................................................... .....................................5 1.6 c urrent c onsumption , t ransmit m odes ................................................... ................................5 1.7 c urrent c onsumption , r eceive m odes ................................................... ...................................6 1.8 r eceive p arameters ................................................... ................................................... ...............6 1.9 t ransmit p arameters ................................................... ................................................... ...........12 1.10 pll p arameters ................................................... ................................................... ....................13 1.11 w ake - up and t iming ................................................... ................................................... .............14 1.12 32 mh z c rystal o scillator ................................................... ................................................... 14 1.13 32 mh z c lock i nput (tcxo)............................................. ................................................... ......14 1.14 32 k h z c lock i nput ................................................... ................................................... ...............15 1.15 32 k h z rc o scillator ................................................... ................................................... ..........15 1.16 i/o and r eset ................................................... ................................................... ..........................15 2 typical performance curves ......................... ................................................... ................16 3 pin configuration .................................. ................................................... ................................19 4 block diagram ...................................... ................................................... ...................................20 4.1 f requency s ynthesizer ................................................... ................................................... .......20 4.2 r eceiver ................................................... ................................................... .................................20 4.3 t ransmitter ................................................... ................................................... ...........................21 4.4 r adio c ontrol and u ser i nterface ................................................... ......................................21 4.5 e nhanced w ake -o n -r adio ( e wor) ............................................... ..........................................21 4.6 s niff m ode ................................................... ................................................... ..............................21 4.7 a ntenna d iversity ................................................... ................................................... ...............22 5 typical application circuit........................ ................................................... ....................23 6 history ............................................ ................................................... ..............................................24
cc1120 swrs112c C revised april 2012 page 3 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1 electrical specifications all measurements performed on cc1120em_868_915 rev. 1.0.1, cc1120em_955 rev.1.2.1, cc1120em_420_470 rev.1.0.1 or cc1120em_169 rev.1.2 1.1 absolute max ratings parameter min typ max unit condition supply voltage -0.3 3.9 v storage temperature range -40 125 c esd 2000 v hbm esd 500 v cdm input rf level +10 dbm voltage on any digital pin -0.3 3.9 v voltage on analog pins (including dcpl pins) -0.3 2.0 v 1.2 general characteristics parameter min typ max unit condition voltage supply range 2.0 3.6 v temperature range -40 85 c 1.3 rf characteristics parameter min typ max unit condition 820 960 mhz 410 480 mhz 274 320 mhz please see application note an115 using the cc112x/cc1175 at 274 to 320 mhz for more information frequency bands 164 192 mhz 30 hz in 820-960 mhz band 15 hz in 410-480 mhz band frequency resolution 6 hz in 164-192 mhz band 0 200 kbps packet mode datarate 0 100 kbps transparent mode datarate step size 1e-4 bps
cc1120 swrs112c C revised april 2012 page 4 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1.4 regulatory standards performance mode frequency band suitable for compliance with comments 820 C 960 mhz arib t-96 etsi en 300 220 category 2 etsi en 54-25 fcc part 101 fcc part 24 submask d fcc part 15.247 fcc part 15.249 fcc part 90 mask g fcc part 90 mask j performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the cc1190 410 C 480 mhz arib t-67 arib rcr std-30 etsi en 300 220 category 1 fcc part 90 mask d fcc part 90 mask g performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender high performance mode 164 C 192 mhz etsi en 300 220 category 1 fcc part 90 mask d performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 820 C 960 mhz etsi en 300 220 fcc part 15.247 fcc part 15.249 410 C 480 mhz etsi en 300 220 low power mode 164 C 192 mhz etsi en 300 220
cc1120 swrs112c C revised april 2012 page 5 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1.5 current consumption, static modes t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition 0.3 1 a power down with retention 0.5 a low-power rc oscillator running xoff mode 170 a crystal oscillator / tcxo disabl ed idle mode 1.3 ma clock running, system waiting with no radio activity 1.6 current consumption, transmit modes 950 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 37 ma tx current consumption 0 dbm 26 ma 868/915 mhz bands (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +14 dbm 45 ma tx current consumption +10 dbm 34 ma 434 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 50 ma tx current consumption +14 dbm 45 ma tx current consumption +10 dbm 34 ma 170 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 54 ma tx current consumption +14 dbm 49 ma tx current consumption +10 dbm 41 ma low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 32 ma
cc1120 swrs112c C revised april 2012 page 6 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1.7 current consumption, receive modes high performance mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition rx wait for sync 1.2 kbps, 4 byte preamble 38.4kbps, 4 byte preamble 2 13.4 ma ma using rx sniff mode, where the receiver wakes up at regular intervals to look for an incoming packet rx peak current 433, 868/915 and 950 mhz bands 170 mhz band 22 23 ma ma peak current consumption during packet reception at the sensitivity threshold average current consumption check for data packet every 1 second using wake on radio 15 ua 50 kbps, 5 byte preamble, 32 khz rc oscillator used as sleep timer low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition rx peak current low power rx mode 1.2 kbps 17 ma peak current consumption during packet reception at the sensitivity level 1.8 receive parameters 1 general receive parameters (high performance mode) t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition saturation +10 dbm digital channel filter programmable bandwidth 8 200 khz iip3, normal mode -14 dbm at maximum gain iip3, high linearity mode -8 dbm using 6 db gain reduction in front end datarate offset tolerance 12 0.2 % % with carrier sense detection enabled and assuming 4 byte preamble with carrier sense detection disabled spurious emissions 1 - 13 ghz (vco leakage at 3.5 ghz) 30 mhz to 1 ghz -56 < -57 dbm dbm radiated emissions measured according to etsi en 300 220, f c = 869.5 mhz 1 all rx measurements made at the antenna connector, to a bit error rate limit of 1%
cc1120 swrs112c C revised april 2012 page 7 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. rx performance in 950 mhz band (high performance mo de) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition -120 dbm 1.2 kbps, dev=4 khz chf=10 khz 2 -114 dbm 1.2 kbps, dev=20 khz chf=50 khz -107 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz sensitivity note: sensitivity can be improved if the tx and rx matching networks are separated. -100 dbm 200 kbps, dev=83 khz (outer symbols), chf=200 khz, 4gfsk 3 51 db 12.5 khz (adjacent channel) 52 db 25 khz (alternate channel) 73 db 1 mhz 76 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 81 db 10 mhz 47 db 50 khz (adjacent channel) 48 db + 100 khz (alternate channel) 69 db 1 mhz 71 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 78 db 10 mhz 43 db 200 khz (adjacent channel) 51 db 400 khz (alternate channel) 62 db 1 mhz 65 db 2 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode) 71 db 10 mhz 37 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) 55 db 1 mhz 58 db 2 mhz blocking and selectivity 200 kbps 4gfsk, 83 khz deviation (outer symbols), 200 khz channel filter, zero if 64 db 10 mhz 2 dev is short for deviation, chf is short for chann el filter bandwidth 3 bt=0.5 is used in all gfsk measurements
cc1120 swrs112c C revised april 2012 page 8 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. rx performance in 868/915 mhz bands (high performan ce mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition -127 dbm 300 bps with coding gain (using a pn spreading sequence with 4 chips per databit) -123 dbm 1.2 kbps, dev=4 khz chf=10 khz -117 dbm 1.2 kbps, dev=20 khz chf=50 khz -114 dbm 4.8 kbps ook -110 dbm 38.4 kbps, dev=50 khz chf=100 khz -110 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz sensitivity -103 dbm 200 kbps, dev=83 khz (outer symbols), chf=200 khz, 4gfsk 54 db 12.5 khz (adjacent channel) 54 db 25 khz (alternate channel) 75 db 1 mhz 79 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 87 db 10 mhz 48 db 50 khz (adjacent channel) 48 db + 100 khz (alternate channel) 69 db 1 mhz 74 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 81 db 10 mhz 42 db + 100 khz (adjacent channel) 43 db 200 khz (alternate channel) 62 db 1 mhz 66 db 2 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 74 db 10 mhz 43 db 200 khz (adjacent channel) 50 db 400 khz (alternate channel) 61 db 1 mhz 65 db 2 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode) 74 db 10 mhz 36 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) 55 db 1 mhz 59 db 2 mhz blocking and selectivity 200 kbps 4gfsk, 83 khz deviation (outer symbols), 200 khz channel filter, zero if 67 db 10 mhz image rejection (image compensation enabled) 54 db 1.2 kbps, 12.5 khz channel separation, fsk, image at -125 khz
cc1120 swrs112c C revised april 2012 page 9 o f 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. rx performance in 434 mhz band (high performance mo de) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition -123 dbm 1.2 kbps, dev=4 khz chf=10 khz -109 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz sensitivity -116 dbm 1.2 kbps, dev=20 khz chf=50 khz 60 db 12.5 khz (adjacent channel) 60 db 25 khz (alternate channel) 79 db 1 mhz 82 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 91 db 10 mhz 54 db 50 khz (adjacent channel) 54 db + 100 khz (alternate channel) 74 db 1 mhz 78 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 86 db 10 mhz 47 db + 100 khz (adjacent channel) 50 db 200 khz (alternate channel) 67 db 1 mhz 71 db 2 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 78 db 10 mhz
cc1120 swrs112c C revised april 2012 page 10 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. rx performance in 170 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition -123 dbm 1.2 kbps, dev=4 khz chf=10 khz sensitivity -117 dbm 1.2 kbps, dev=20 khz chf=50 khz 64 db 12.5 khz (adjacent channel) 66 db 25 khz (alternate channel) 82 db 1 mhz 83 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 89 db 10 mhz 60 db 50 khz (adjacent channel) 60 db + 100 khz (alternate channel) 76 db 1 mhz 77 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 83 db 10 mhz spurious response rejection 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 70 db image rejection (image compensation enabled) 66 db 1.2 kbps, 12.5 khz channel separation, fsk, image at -125 khz
cc1120 swrs112c C revised april 2012 page 11 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. rx performance in low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition -111 dbm 1.2 kbps, dev=4 khz chf=10 khz -99 dbm 38.4 kbps, dev=50 khz chf=100 khz sensitivity -99 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz 46 db 12.5 khz (adjacent channel) 46 db 25 khz (alternate channel) 73 db 1 mhz 78 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 79 db 10 mhz 43 db 50 khz (adjacent channel) 45 db + 100 khz (alternate channel) 71 db 1 mhz 74 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 75 db 10 mhz 37 db + 100 khz (adjacent channel) 43 db + 200 khz (alternate channel) 58 db 1 mhz 62 db 2 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 64 db + 10 mhz 43 db + 200 khz (adjacent channel) 52 db + 400 khz (alternate channel) 60 db 1 mhz 64 db 2 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode) 65 db 10 mhz saturation +10 dbm
cc1120 swrs112c C revised april 2012 page 12 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1.9 transmit parameters t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition +12 at 950 mhz +14 +15 at 915 mhz at 915 mhz with vdd = 3.6 v +15 +16 at 868 mhz at 868 mhz with vdd = 3.6 v +15 +16 at 433 mhz at 433 mhz with vdd = 3.6 v max output power +15 +16 at 170 mhz at 170 mhz with vdd = 3.6 v min output power -11 -40 dbm dbm within fine step size range within coarse step size range output power step size 0.4 db within fine step si ze range -75 dbc 4-gfsk 9.6 kbps in 12.5 khz channel, measured in 100 hz bandwidth at 434 mhz (fcc part 90 mask d compliant) -58 dbc 4-gfsk 9.6 kbps in 12.5 khz channel, measured in 8.75 khz bandwidth (etsi 300 220 compliant) adjacent channel power -61 dbc 2-gfsk 2.4 kbps in 12.5 khz channel, 1.2 khz deviation spurious emissions (not including harmonics) < -60 dbm harmonics 2 nd harm, 170 mhz 3 rd harm, 170 mhz 2 nd harm, 433 mhz 3 rd harm, 433 mhz 2 nd harm, 450 mhz 3 rd harm, 450 mhz 2 nd harm, 868 mhz 3 rd harm, 868 mhz 2 nd harm, 915 mhz 3 rd harm, 915 mhz 4 th harm, 915 mhz 2 nd harm, 950 mhz 3 rd harm, 950 mhz -39 -58 -56 -51 -60 -45 -40 -42 56 52 60 -58 -42 dbm dbm dbm dbm dbm dbm dbm dbm dbuv/m dbuv/m dbuv/m dbm dbm transmission at +14 dbm (or maximum allowed in applicable band where this is less than +14dbm) using ti reference design radiated emissions measured according to arib t-96 in 950 mhz band, etsi en 300-220 in 170, 433 and 868 mhz bands and fcc part 15.247 in 450 and 915 mhz band fourth harmonic in 915 mhz band will require extra filtering to meet fcc requirements if transmitting in long intervals (>50 ms periods)
cc1120 swrs112c C revised april 2012 page 13 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1.10 pll parameters high performance mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition -99 dbc/hz 10 khz offset -99 dbc/hz 100 khz offset phase noise in 950 mhz band -123 dbc/hz 1 mhz offset -99 dbc/hz 10 khz offset -100 dbc/hz 100 khz offset phase noise in 868/915 mhz bands -122 dbc/hz 1 mhz offset -106 dbc/hz 10 khz offset -107 dbc/hz 100 khz offset phase noise in 433 mhz band -127 dbc/hz 1 mhz offset -111 dbc/hz 10 khz offset -116 dbc/hz 100 khz offset phase noise in 170 mhz band -135 dbc/hz 1 mhz offset low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition -90 dbc/hz 10 khz offset -92 dbc/hz 100 khz offset phase noise in 950 mhz band -124 dbc/hz 1 mhz offset -95 dbc/hz 10 khz offset -95 dbc/hz 100 khz offset phase noise in 868/915 mhz bands -124 dbc/hz 1 mhz offset -98 dbc/hz 10 khz offset -102 dbc/hz 100 khz offset phase noise in 433 mhz band -129 dbc/hz 1 mhz offset -106 dbc/hz 10 khz offset -110 dbc/hz 100 khz offset phase noise in 170 mhz band -136 dbc/hz 1 mhz offset
cc1120 swrs112c C revised april 2012 page 14 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1.11 wake-up and timing t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition powerdown to idle 0.4 ms depends on crystal 166 s calibration disabled idle to rx/tx 461 s calibration enabled rx/tx turnaround 50 s 296 s calibrate when leaving rx/tx enabled rx/tx to idle time 0 s calibrate when leaving rx/tx disabled frequency synthesizer calibration 0.4 ms when usi ng scal strobe minimum required number of preamble bytes 0.5 bytes required for rf front end gain settling only. digital demodulation does not require preamble for settling 4.6 ms 12.5 khz channels time from start rx until valid rssi including gain settling (function of channel bandwidth. programmable for trade-off between speed and accuracy) 0.3 ms 200 khz channels 1.12 32 mhz crystal oscillator t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition crystal frequency 32 33.6 mhz note: it is recommended that the crystal frequency is chosen so that the rf channel(s) are >1 mhz away from multiples of xosc in tx and xosc/2 in rx load capacitance (c l ) 10 pf esr 60 simulated over operating conditions start-up time 0.4 ms depends on crystal 1.13 32 mhz clock input (tcxo) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 33.6 mhz clock input amplitude (peak-to-peak) 0.8 vdd v sim ulated over operating conditions
cc1120 swrs112c C revised april 2012 page 15 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 1.14 32 khz clock input t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 khz 32 khz clock input pin input high voltage 0.8vdd v 32 khz clock input pin input low voltage 0.2vdd v 1.15 32 khz rc oscillator t a = 25c, vdd = 3.0 v if nothing else stated. parameter min typ max unit condition frequency 32 khz after calibration frequency accuracy after calibration 0.1 % relative to frequency reference (i.e. 32 mhz crystal or tcxo) initial calibration time 1.6 ms 1.16 i/o and reset t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition logic input high voltage logic input low voltage 0.8vdd 0.2vdd v v logic output high voltage logic output low voltage 0.8vdd 0.2vdd v v at 4 ma output load or less power-on reset threshold 1.3 v voltage on dvdd p in
cc1120 swrs112c C revised april 2012 page 16 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 2 typical performance curves t a = 25c, vdd = 3.0 v if nothing else stated sensitivity vs temperature 1.2kbps, 4khz deviation, 10khz ch. filter bw -125 -124 -123 -122 -121 -120 -40 0 40 80 temperature (oc) s ensitivity (db m ) sync word sensitivity vs sync word detect threshold 1.2kbps, 4khz deviation, 10khz ch. filter bw -130 -128 -126 -124 -122 -120 -118 -116 -114 3 5 7 9 11 13 15 17 sync word detect threshold s ensitivity (db m ) rx current vs input level 1.2kbps, 4khz deviation, 10khz ch. filter bw 20.8 21.2 21.6 22 22.4 22.8 23.2 -130 -80 -30 20 input level (dbm) r x c urrent (m a ) selectivity vs offset frequency (12.5khz channels) 1.2kbps, 4khz deviation, 10khz ch. filter bw -20 -10 0 10 20 30 40 50 60 70 169.9 169.95 170 170.05 170.1 frequency (mhz) selectivity (db) selectivity vs offset frequency (12.5khz channels) 1.2kbps, 4khz deviation, 10khz ch. filter bw -10 0 10 20 30 40 50 60 70 859.9 859.95 860 860.05 860.1 frequency (mhz) selectivity (db) sensitivity vs voltage 1.2kbps, 4khz deviation, 10khz ch. filter bw -124 -123 -122 -121 -120 2 2.5 3 3.5 supply voltage (v) s ensitivity (db m )
cc1120 swrs112c C revised april 2012 page 17 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. output power at 868mhz vs pa power setting -50 -40 -30 -20 -10 0 10 20 7f 7 b 77 7 3 6f 6b 67 63 5 f 5b 5 7 5 3 4 f 4b 4 7 4 3 pa power setting o utput power (dbm ) tx current at 868mhz vs pa power setting 0 10 20 30 40 50 60 7 f 7b 7 7 73 6 f 6 b 6 7 6 3 5f 5 b 57 5 3 4f 4b 4 7 43 pa power setting tx c urrent (m a ) rssi vs input level 1.2kbps, 4khz deviation, 10khz ch. filter bw -40 -20 0 20 40 60 80 100 -150 -100 -50 0 input level (dbm) r s s i output power vs voltage max setting, 170 mhz 6 8 10 12 14 16 18 2 2.5 3 3.5 supply voltage (v) o u tp u t p o w e r (d b m ) output power vs temperature max setting, 170 mhz, 3.6v 15 15.5 16 16.5 17 -40 0 40 80 temperature (oc) o utput p ow er (db m )
cc1120 swrs112c C revised april 2012 page 18 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. gpio output low voltage vs current being sinked 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 current (ma) gpio output low voltage (mv) gpio output high voltage vs current being sourced 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0 5 10 15 20 25 30 35 current (ma) gpio output high voltage (v)
cc1120 swrs112c C revised april 2012 page 19 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 3 pin configuration the cc1120 pin-out is shown in the table below. pin # pin name type / direction description 1 vdd_guard power 2.0 - 3.6 v vdd 2 reset_n digital input asynchronous, active-low di gital reset 3 gpio3 digital input/output general purpose io 4 gpio2 digital input/output general purpose io 5 dvdd power 2.0 - 3.6 vdd to internal digital regu lator 6 dcpl power digital regulator output to external d ecoupling capacitor 7 si digital input serial data in 8 sclk digital input serial data clock 9 so(gpio1) digital input/output serial data out (g eneral purpose io) 10 gpio0 digital input/output general purpose io 11 cs_n digital input active-low chip-select 12 dvdd power 2.0 - 3.6 v vdd 13 avdd_if power 2.0 - 3.6 v vdd 14 rbias analog external high precision r 15 avdd_rf power 2.0 - 3.6 v vdd 16 nc not connected 17 pa analog single-ended tx output 18 trx_sw analog tx/rx switch 19 lna_p analog differential rx input 20 lna_n analog differential rx input 21 dcpl_vco power pin for external decoupling of vc o supply regulator 22 avdd_synth1 power 2.0 - 3.6 v vdd 23 lpf0 analog external loopfilter components 24 lpf1 analog external loopfilter components 25 avdd_pfd_chp power 2.0 - 3.6 v vdd 26 dcpl_pfd_chp power pin for external decoupling o f pfd and chp regulator 27 avdd_synth2 power 2.0 - 3.6 v vdd 28 avdd_xosc power 2.0 - 3.6 v vdd 29 dcpl_xosc power pin for external decoupling of x osc supply regulator 30 xosc_q1 analog crystal oscillator pin 1 (must be grounded if a tcxo or other external clock connected to ext_xosc is used) 31 xosc_q2 analog crystal oscillator pin 2 (must be left floating if a tcxo or other external clock connected to ext_xosc is used) 32 ext_xosc digital input pin for external xosc inp ut (must be grounded if a regular xosc connected to xosc_q1 and xosc_q2 is used) - gnd ground pad the ground pad must be connected t o a solid ground plane
cc1120 swrs112c C revised april 2012 page 20 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 4 block diagram a system block diagram of cc1120 is shown figure 4.1. figure 4.1 : system block diagram 4.1 frequency synthesizer at the heart of cc1120 there is a fully integrated, fractional-n, ultra h igh performance frequency synthesizer. the frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking perfor mance. the system is designed to comply with the most stringent regulatory spectral masks at max imum transmit power. either a crystal can be connected to xosc_q1 and xo sc_q2, or a tcxo can be connected to the ext_xosc input. the oscillator generates the re ference frequency for the synthesizer, as well as clocks for the adc and the digital part. to reduce system cost, cc1120 has high accuracy frequency estimation and compensation registers to measure and compensate for crystal inaccuracies, enabling the use of lower cost crysta ls. if a tcxo is used, the cc1120 will automatically turn the tcxo on and off when needed to support low power modes and wake-on- radio operation. 4.2 receiver cc1120 features a highly flexible receiver. the received rf signal is amplified by the low-noise amplifier (lna) and down-converted in quadrature (i and q) to the intermediate frequency (if). at if, the i/q signals are digitized by the high dynam ic range adcs. an advanced automatic gain control (agc) unit adjus ts the front end gain, and enables the cc1120 to receive both strong and weak signals, even in t he presence of strong interferers. high attenuation channel and data filtering enable recep tion with strong neighbor channel interferers. the i/q signal is converted to a phase / magnitude signal to support both fsk and ook modulation schemes.
cc1120 swrs112c C revised april 2012 page 21 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. a sophisticated pattern recognition algorithm locks onto the synchronization word without need for preamble settling bytes. receiver settling time is therefore reduced to the settling time of the agc, typically 4 bits. the advanced pattern recogni tion also greatly reduces the problem of false sync triggering on noise, further reducing power co nsumption and improving sensitivity and reliability. the pattern recognition logic can also be used as a high performance preamble detector to reliably detect a valid preamble in the channel. a novel i/q compensation algorithm removes any prob lem of i/q mismatch and hence avoids time consuming and costly i/q / image calibration steps in production or in the field. 4.3 transmitter the cc1120 transmitter is based on direct synthesis of the rf frequency (in-loop modulation). to achieve effective spectrum usage, cc1120 has extensive data filtering and shaping in tx to support high throughput data communication in narrowband ch annels. the modulator also controls power ramping to remove issues such as spectral splatteri ng when driving external high power rf amplifiers. 4.4 radio control and user interface the cc1120 digital control system is built around marc (main radio control) implemented using an internal high performance 16 bit ultra low power processor. marc handles power modes, radio sequencing and protocol timing. a 4-wire spi serial interface is used for configura tion and data buffer access. the digital baseband includes support for channel configuration , packet handling, and data buffering. the host mcu can stay in power down until a valid rf pa cket has been received, and then burst read the data, greatly reducing the power consumption an d computing power required from the host mcu. the cc1120 radio control and user interface is based on the w idely used cc1101 transceiver to enable easy sw transition between the two platforms . the command strobes and the main radio states are the same for the two platforms. for legacy formats cc1120 also has support for two serial modes. in synchrono us serial mode cc1120 performs bit synchronization and provides the mcu w ith a bit clock with associated data. in transparent mode cc1120 outputs the digital baseband signal using a digital interpolation filter to eliminate jitter introduced by digital filtering an d demodulation. 4.5 enhanced wake-on-radio (ewor) ewor, using a flexible integrated sleep timer, enab les automatic receiver polling with no intervention from the mcu. the cc1120 will enter rx, listen and return to sleep if a val id rf packet is not received. the sleep interval and duty cycle can be configured to make a trade-off between network latency and power consumption. incoming mes sages are time-stamped to simplify timer re-synchronization. the ewor timer runs off an ultra low power 32 khz r c oscillator. to improve timing accuracy, the rc oscillator can be automatically calibrated t o the rf crystal in configurable intervals. 4.6 sniff mode the cc1120 supports very quick start up times, and requires ve ry few preamble bits. sniff mode uses this to dramatically reduce the current consum ption while the receiver is waiting for data. since the cc1120 is able to wake up and settle much faster than the length of most preambles, it is not required to be in rx continuously while waiting for a packet to arrive. instead, the enhanced wake-on-radio feature can be used to put the device into sleep periodically. by setting an appropriate sleep time, the cc1120 will be able to wake up and receive the packet when it arrives with no performance loss. this removes the need for accurate timing synchronization between
cc1120 swrs112c C revised april 2012 page 22 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. transmitter and receiver, and allows the user to tr ade off current consumption between the transmitter and receiver. 4.7 antenna diversity antenna diversity can increase performance in a mul ti-path environment. an external antenna switch is required. the switch can be automatically controlled by cc1120 using one of the gpio pins (also support for differential output control signal typically used in rf switches). if antenna diversity is enabled, the gpio will alte rnate between states until a valid rf input signal is detected. an optional acknowledge packet can be transmitted without changing gpio state. an incoming rf signal can be validated by received signal strength, by using the automatic preamble detector, or a combination of the two. usi ng the preamble detector will make a more robust system and avoid the need to set a defined s ignal strength threshold, as this threshold will set the sensitivity limit of the system.
cc1120 swrs112c C revised april 2012 page 23 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 5 typical application circuit very few external components are required for the o peration of cc1120 . a typical application circuit is shown below. note that it does not show how the board layout should be done, which will greatly influence the rf performance of cc1120 . this section is meant as an introduction only. note that decoupling capacitors for power pins are not shown in the figure below. figure 5.1 : typical application circuit
cc1120 swrs112c C revised april 2012 page 24 of 24 production data information is current as of public ation date. products conform to specifications per the terms of texas instruments s tandard warranty. production processing does not necessarily include testing of all parameters. 6 history revision date description / changes swrs112c april 2012 added ground pad on page 1 pin- out and pin description added tcxo clock input voltage requirement changed all pin names in pin description and figure s to uppercase changed "pa out" to "pa" in block diagram corrected deviation on 38.4kbps case from 50khz to 20khz corrected error in em list: cc1120em_420_970 is cor rected to cc1120em_420_470 added 274 - 320 mhz band and pointed to app note fo r more info (added mention of 315 mhz band on front page) updated sniff mode current to 2 ma added "wavematch:" in front of "advanced digital si gnal processing ..." on front page data rate offset tolerance: specified that 4 byte p reamble only applies to 12% offset removed solder reflow temperature and moisture sens itivity level under absolute max ratings moved crystal esr to max column added history section swrs112b sept. 2011 initial release swrs112 aug. 2011 preliminary data sheet
package option addendum www.ti.com 27-apr-2012 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ ball finish msl peak temp (3) samples (requires login) cc1120rhmr active qfn rhm 32 3000 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr cc1120rhmt active qfn rhm 32 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. -- the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant cc1120rhmr qfn rhm 32 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 cc1120rhmt qfn rhm 32 250 330.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 package materials information www.ti.com 26-apr-2012 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) cc1120rhmr qfn rhm 32 3000 338.1 338.1 20.6 cc1120rhmt qfn rhm 32 250 338.1 338.1 20.6 package materials information www.ti.com 26-apr-2012 pack materials-page 2

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